Non-volatile two-transistor semiconductor memory cell and method for producing the same

The invention relates to a nonvolatile semiconductor memory cell and to an associated fabrication method, a source region (7), a drain region (8) and a channel region lying in between being formed in a substrate (1). In order to realize locally delimited memory locations (LB, RB), an electrically no...

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Bibliographic Details
Main Authors SCHULER FRANZ, TEMPEL GEORG
Format Patent
LanguageEnglish
Published 10.04.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention relates to a nonvolatile semiconductor memory cell and to an associated fabrication method, a source region (7), a drain region (8) and a channel region lying in between being formed in a substrate (1). In order to realize locally delimited memory locations (LB, RB), an electrically non-conductive charge storage layer (3) situated on a first insulation layer (2) is divided by an interruption (U), thereby preventing, in particular, a lateral charge transport between the memory locations (LB, RB) and significantly improving the charge retention properties.
Bibliography:Application Number: US20080079003