Nonvolatile semiconductor storage device

This invention has the purpose of providing a nonvolatile semiconductor storage device which is capable of entering multivalued storage in a FeFET unit without requiring preparation of a plurality of voltage sources. The nonvolatile semiconductor storage device is provided with multivalued ferroelec...

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Bibliographic Details
Main Authors TAKAHASHI MITSUE, SAKAI SHIGEKI, TAKEUCHI KEN, WANG SHOUYU
Format Patent
LanguageEnglish
Published 20.03.2012
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:This invention has the purpose of providing a nonvolatile semiconductor storage device which is capable of entering multivalued storage in a FeFET unit without requiring preparation of a plurality of voltage sources. The nonvolatile semiconductor storage device is provided with multivalued ferroelectric memory cells which impart varied quantities of polarization to a ferroelectric material by applying pulse voltages having one and the same height and varied widths and consequently produce varied states of storage in conformity with the varied quantities of polarization.
Bibliography:Application Number: US20090565477