Photodiode with a reduced dark current and method for the production thereof

A photodiode in which a pn junction is formed between the doped region (DG) formed in the surface of a crystalline semiconductor substrate and a semiconductor layer (HS) deposited above said doped region. An additional doping (GD) is provided in the edge region of the doped zone, by means of which a...

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Bibliographic Details
Main Authors MEINHARDT GERALD, KRAFT JOCHEN, LOEFFLER BERNHARD
Format Patent
LanguageEnglish
Published 13.03.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A photodiode in which a pn junction is formed between the doped region (DG) formed in the surface of a crystalline semiconductor substrate and a semiconductor layer (HS) deposited above said doped region. An additional doping (GD) is provided in the edge region of the doped zone, by means of which additional doping the pn junction is shifted deeper into the substrate (SU). With the greater distance of the pn junction from defects at phase boundaries that is achieved in this way, the dark current within the photodiode is reduced.
Bibliography:Application Number: US20060922255