Methods of patterning positive photoresist

A method of patterning positive photoresist includes providing positive photoresist over a substrate. An area of the positive photoresist is exposed to a pattern of activating radiation at a dose which is below the Dose To CD of the pattern with the positive photoresist. The area of the positive pho...

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Bibliographic Details
Main Authors SHIRLEY PAUL D, MORI HIROYUKI
Format Patent
LanguageEnglish
Published 28.02.2012
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:A method of patterning positive photoresist includes providing positive photoresist over a substrate. An area of the positive photoresist is exposed to a pattern of activating radiation at a dose which is below the Dose To CD of the pattern with the positive photoresist. The area of the positive photoresist is flood exposed to activating radiation at a dose from 1% to 75% of E0. A sum of the flood dose and the pattern dose is less than the Dose To CD yet effective to resolve the pattern in the positive photoresist upon develop. After exposing the area to the flood dose and the pattern dose, the area of the positive photoresist is developed to resolve the pattern in the positive photoresist. Other embodiments are contemplated.
Bibliography:Application Number: US20090396941