Chemical mechanical polishing method and chemical mechanical polishing device

• Main Authors: MIYATA MASANORI, UEHARA TADAO, SUZUKI AKINORI, USAMI TARO, OKADA TETSUYA, SOGAWA KOICHI, NISHIHARA KENJI, CHIN SHISYO, HARUKI TOHRU, TERATANI HIROAKI, KOHNO YUUICHI
• Format: Patent
• Language: English
• Published: 14.02.2012
• Subjects: BASIC ELECTRIC ELEMENTS; CALCULATING; COMPUTING; COUNTING; DRESSING OR CONDITIONING OF ABRADING SURFACES; ELECTRIC DIGITAL DATA PROCESSING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; PERFORMING OPERATIONS; PHYSICS; POLISHING; SEMICONDUCTOR DEVICES; TRANSPORTING

A chemical mechanical polishing method including a step of forming a plurality of interlayer insulating films so as to coat a plurality of projecting patterns, at least one of the plurality of projecting patterns being formed on each of a plurality of substrates, whereby the plurality of projection patterns have different area ratios R with respect to the corresponding substrates, and performing a flattening process on the interlayer insulating films before linear approximation; a step of obtaining a linear approximation formula R=aT+b expressing a relationship between the area ratio R and a polishing time T, where R1, R2, R3, . . . , Rx represent the area ratio R of each of the projecting patterns with respect to the corresponding substrates, and T1, T2, T3, . . . , Tx represent the polishing time T required for achieving a target film thickness when performing the flattening process by polishing each of the interlayer insulating films coating the projecting patterns; and a step of calculating, with the use of a formula T=(R−b)/a, the polishing time T for the interlayer insulating films coating the projecting patterns having the area ratio R.