Method for manufacturing microcrystalline semiconductor and thin film transistor

A technique for manufacturing a microcrystalline semiconductor layer with high mass productivity is provided. In a reaction chamber of a plasma CVD apparatus, an upper electrode and a lower electrode are provided in almost parallel to each other. A hollow portion is formed in the upper electrode, an...

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Bibliographic Details
Main Authors ICHIJO MITSUHIRO, KURIKI KAZUTAKA, ENDO TOSHIYA, YOKOI TOMOKAZU
Format Patent
LanguageEnglish
Published 14.02.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC HEATING
ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A technique for manufacturing a microcrystalline semiconductor layer with high mass productivity is provided. In a reaction chamber of a plasma CVD apparatus, an upper electrode and a lower electrode are provided in almost parallel to each other. A hollow portion is formed in the upper electrode, and the upper electrode includes a shower plate having a plurality of holes formed on a surface of the upper electrode which faces the lower electrode. A substrate is provided over the lower electrode. A gas containing a deposition gas and hydrogen is supplied to the reaction chamber from the shower plate through the hollow portion of the upper electrode, and a rare gas is supplied to the reaction chamber from a portion different from the upper electrode. Accordingly, high-frequency power is supplied to the upper electrode to generate plasma, so that a microcrystalline semiconductor layer is formed over the substrate.
Bibliography:Application Number: US20100908228