Shallow extension regions having abrupt extension junctions
A method of forming a semiconductor device is provided that includes forming a gate structure atop a substrate and implanting dopants into the substrate to a depth of 10 nm or less from an upper surface of the substrate. In a following step, an anneal is performed with a peak temperature ranging fro...
Saved in:
| Main Authors | , |
|---|---|
| Format | Patent |
| Language | English |
| Published |
14.02.2012
|
| Subjects | |
| Online Access | Get full text |
Cover
Loading…
| Abstract | A method of forming a semiconductor device is provided that includes forming a gate structure atop a substrate and implanting dopants into the substrate to a depth of 10 nm or less from an upper surface of the substrate. In a following step, an anneal is performed with a peak temperature ranging from 1200° C. to 1400° C., and a hold time period ranging from 1 millisecond to 5 milliseconds. |
|---|---|
| AbstractList | A method of forming a semiconductor device is provided that includes forming a gate structure atop a substrate and implanting dopants into the substrate to a depth of 10 nm or less from an upper surface of the substrate. In a following step, an anneal is performed with a peak temperature ranging from 1200° C. to 1400° C., and a hold time period ranging from 1 millisecond to 5 milliseconds. |
| Author | RONSHEIM PAUL A LEE KAM-LEUNG |
| Author_xml | – fullname: LEE KAM-LEUNG – fullname: RONSHEIM PAUL A |
| BookMark | eNrjYmDJy89L5WSwDs5IzMnJL1dIrShJzSvOzM9TKEpNB1LFChmJZZl56QqJSUWlBSVI8lmlecklIBU8DKxpiTnFqbxQmptBwc01xNlDN7UgPz61uCAxOTUvtSQ-NNjC0NDE3MTCyciYCCUAxhkx5w |
| ContentType | Patent |
| DBID | EVB |
| DatabaseName | esp@cenet |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Medicine Chemistry Sciences |
| ExternalDocumentID | US8114748B2 |
| GroupedDBID | EVB |
| ID | FETCH-epo_espacenet_US8114748B23 |
| IEDL.DBID | EVB |
| IngestDate | Fri Jul 19 16:47:38 EDT 2024 |
| IsOpenAccess | true |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-epo_espacenet_US8114748B23 |
| Notes | Application Number: US20090491819 |
| OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120214&DB=EPODOC&CC=US&NR=8114748B2 |
| ParticipantIDs | epo_espacenet_US8114748B2 |
| PublicationCentury | 2000 |
| PublicationDate | 20120214 |
| PublicationDateYYYYMMDD | 2012-02-14 |
| PublicationDate_xml | – month: 02 year: 2012 text: 20120214 day: 14 |
| PublicationDecade | 2010 |
| PublicationYear | 2012 |
| RelatedCompanies | INTERNATIONAL BUSINESS MACHINES CORPORATION RONSHEIM PAUL A LEE KAM-LEUNG |
| RelatedCompanies_xml | – name: LEE KAM-LEUNG – name: INTERNATIONAL BUSINESS MACHINES CORPORATION – name: RONSHEIM PAUL A |
| Score | 2.828063 |
| Snippet | A method of forming a semiconductor device is provided that includes forming a gate structure atop a substrate and implanting dopants into the substrate to a... |
| SourceID | epo |
| SourceType | Open Access Repository |
| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Shallow extension regions having abrupt extension junctions |
| URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120214&DB=EPODOC&locale=&CC=US&NR=8114748B2 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_GFPVNp-L8Ig_StyKp2XZDitB2ZQj7wK6yt5E0rcyHtmwd-_dNQjf3om8hgZAcd7nkcr_fATxlApkj-9IWmGU2kxnayBNhO7yLmCBLGWqg8GjcHcbsfd6ZN2C5w8IYntCtIUdUFpUoe6_MeV3-BrECk1u5fhZL1VW8hTM3sOrXMXU0BZgVeO5gOgkmvuX7bhxZ4w8X1b2_x9BTp_WRvkVrmv3Bp6dBKeWhRwnP4XiqJsurC2ikeQtO_V3htRacjOr_btWsTW99Ca-RLntSbIkJW-sYF9FFFZTSEA20z78IF6tNWR2MfyufZdTqCkg4mPlDW61isd_xIo726325hmZe5OkNEJTKACmjPSo0e6fkvMMFplImiKxPRRvaf05z-8_YHZxp0elcZMruoVmtNumDcrWVeDRC-gFJy4WH |
| link.rule.ids | 230,309,786,891,25594,76906 |
| linkProvider | European Patent Office |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3fT8IwEL4QNOKbokb8uQezt8VsFnbELCbbIFPZII4Z3ki7bgYfBoER_n3bZiAv-ta0SdNe7nrt9b7vAB5yhsTiXW4wzHOD8BwNpCkzLNpBTJFkBCVQOIw6QULeJu1JDWZbLIziCd0ockRhUamw91Kd14vfIJavcitXj2wmuuYv_bHj69Xr2LQkBZjuu05vNPSHnu55ThLr0YeD4t5vE3TFaX1gS3JeeXP6dCUoZbHvUfoncDgSkxXlKdSyogkNb1t4rQlHYfXfLZqV6a3O4DmWZU_mG02FrWWMS5NFFYTSaBJoX3xplC3Xi3Jv_Fv4LKVW56D1e2MvMMQqprsdT5N4t96nC6gX8yK7BA25MECTmLbJJHsnp7RNGWacp4ika7IWtP6c5uqfsXtoBONwMB28Ru_XcCzFKPOSTXID9XK5zm6F2y3ZnRLYD7EtiHQ |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Shallow+extension+regions+having+abrupt+extension+junctions&rft.inventor=LEE+KAM-LEUNG&rft.inventor=RONSHEIM+PAUL+A&rft.date=2012-02-14&rft.externalDBID=B2&rft.externalDocID=US8114748B2 |