Method for fabricating an organic thin film transistor

Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by t...

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Bibliographic Details
Main Authors LEE BANG LIN, JEONG EUN JEONG, LEE SANG YOON, PARK JEONG IL, KIM DO HWAN, YOO BYUNG WOOK, MOON HYUN SIK
Format Patent
LanguageEnglish
Published 14.02.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process.
Bibliography:Application Number: US20090379856