Forward voltage short-pulse technique for measuring high power laser diode array junction temperature
The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period...
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Format | Patent |
Language | English |
Published |
07.02.2012
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Abstract | The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship. |
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AbstractList | The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship. |
Author | BAKER NATHANIEL R BARNES BRUCE W AMZAJERDIAN FRAZIN MEADOWS BYRON L |
Author_xml | – fullname: MEADOWS BYRON L – fullname: BARNES BRUCE W – fullname: AMZAJERDIAN FRAZIN – fullname: BAKER NATHANIEL R |
BookMark | eNqNjDsSgkAQBTfQwN8d5gIEgIGxlpS5GlNT8IS1YGed3ZXy9hJ4AJPXSfdbm4UTh5VBJTqxtvSWIXIHCr1ozHwaAiii6Z19JdBDlEZwSGpdR73tevIyQWngMG9rpQWxKn_omVwTrbi5Hj2UY1JszfLB8-Pux42h6nw7XTJ4qRE8N3CI9f16yPOi2JfHovxD-QJxkEGL |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences Physics |
ExternalDocumentID | US8112243B2 |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_US8112243B23 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 15:24:47 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_US8112243B23 |
Notes | Application Number: US20080118172 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120207&DB=EPODOC&CC=US&NR=8112243B2 |
ParticipantIDs | epo_espacenet_US8112243B2 |
PublicationCentury | 2000 |
PublicationDate | 20120207 |
PublicationDateYYYYMMDD | 2012-02-07 |
PublicationDate_xml | – month: 02 year: 2012 text: 20120207 day: 07 |
PublicationDecade | 2010 |
PublicationYear | 2012 |
RelatedCompanies | BAKER NATHANIEL R BARNES BRUCE W AMZAJERDIAN FRAZIN MEADOWS BYRON L THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION |
RelatedCompanies_xml | – name: BAKER NATHANIEL R – name: BARNES BRUCE W – name: MEADOWS BYRON L – name: THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION – name: AMZAJERDIAN FRAZIN |
Score | 2.8419795 |
Snippet | The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | MEASURING MEASURING QUANTITY OF HEAT MEASURING TEMPERATURE PHYSICS TESTING THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR |
Title | Forward voltage short-pulse technique for measuring high power laser diode array junction temperature |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120207&DB=EPODOC&locale=&CC=US&NR=8112243B2 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3JasMwEB1Cut7atKXpxhyKb6ZZHC8HU4gXQiELTVxyC15k4kJtYzuU_n1HwnF7aS86SCCkgZn3Rho9ATwG-lCN-looxyFlOgrr6bKvqrGs-0EQG0TRDSG7OJ2pE095WY_WLUj2b2GETuinEEckjwrJ3ysRr_OfQyxb1FaWT0FCXdmzuzJtqc6O-5TK9zTJHpvOYm7PLcmyTG8pzV5Nvc-vkIZjitYHnEVzmX3nbcwfpeS_EcU9g8MFTZZW59BiaQdOrP3Hax04ntb33R04EgWaYUmdtROWF8DcrOC1rkiRpaJwgOWWOLSc7wjlsNFkRWKj-CFOAAmdkMsSY86_REPiy9RGSRYx9IvC_8J3Aje-Z-RCVbXK8iWg66ysiUwr3zRW2njLZo_DK2inWcquAUPF4F7MKB4aSjwI9IERj4wesa5QI3YSd6H75zQ3_4zdwik3t6hf1u6gXRU7dk_wXAUPwrDfHISWbg |
link.rule.ids | 230,309,786,891,25594,76903 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8NAEB5KfdSbVqX1OQfJLdhHmschCE0aovaFbaW3kqQbrGASkhTx3zu7pNGLXvawC8vuwHzzze7stwB3vt5V120tkMOAMh2FtXTZU9VQ1j3fDw2i6IaQXRyNVXehPC17ywpsdm9hhE7opxBHJI8KyN9zgdfJzyGWLWors3t_Q13xgzM3banIjtuUyrc0ye6bg-nEnliSZZmLmTR-MfU2v0Lq9gmt9zTKCEWm9Nrnj1KS3xHFOYb9KU0W5SdQYVEdatbu47U6HI6K--46HIgCzSCjzsIJs1NgTpzyWlckZMkJDjB7Iw4tJ1uKclhqsiKxUfwQJ4AUnZDLEmPCv0RD4svUrjfxmqGXpt4XvlNw43tGLlRVqCyfATqDueXKtPJVaaXVYlbusXsO1SiOWAMwUAzuxYzw0FDCjq93jLBntIh1BRqxk7AJzT-nufhn7BZq7nw0XA0fx8-XcMRNL2qZtSuo5umWXVOozv0bYeRvSwmZWA |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Forward+voltage+short-pulse+technique+for+measuring+high+power+laser+diode+array+junction+temperature&rft.inventor=MEADOWS+BYRON+L&rft.inventor=BARNES+BRUCE+W&rft.inventor=AMZAJERDIAN+FRAZIN&rft.inventor=BAKER+NATHANIEL+R&rft.date=2012-02-07&rft.externalDBID=B2&rft.externalDocID=US8112243B2 |