Forward voltage short-pulse technique for measuring high power laser diode array junction temperature

The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period...

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Bibliographic Details
Main Authors MEADOWS BYRON L, BARNES BRUCE W, AMZAJERDIAN FRAZIN, BAKER NATHANIEL R
Format Patent
LanguageEnglish
Published 07.02.2012
Subjects
MEASURING
MEASURING QUANTITY OF HEAT
MEASURING TEMPERATURE
PHYSICS
TESTING
THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
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Summary:The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.
Bibliography:Application Number: US20080118172