Fabrication method of pixel structure and thin film transistor

A method of fabricating a thin film transistor is disclosed. First, a substrate is provided and a patterned polysilicon layer is formed on the substrate. A metal layer is formed on the patterned polysilicon layer. Then, a portion of the metal layer is removed so that the remaining metal layer beside...

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Bibliographic Details
Main Author TING CHIN-KUO
Format Patent
LanguageEnglish
Published 13.12.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating a thin film transistor is disclosed. First, a substrate is provided and a patterned polysilicon layer is formed on the substrate. A metal layer is formed on the patterned polysilicon layer. Then, a portion of the metal layer is removed so that the remaining metal layer beside the patterned polysilicon layer forms a source and a drain. A gate insulation layer is formed on the substrate to cover the source, the drain and the patterned polysilicon layer. A gate is formed on the gate insulation layer over the patterned polysilicon layer.
Bibliography:Application Number: US20100959389