Semiconductor device with suppressed crystal defects in active areas

A technique that makes it possible to suppress a crystal defect produced in an active area and thereby reduce the fraction defective of semiconductor devices is provided. A first embodiment relates to the planar configuration of SRAM. One of the features of the first embodiment is as illustrated in...

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Main Authors UCHIDA TETSUYA, KIJIMA TAKEHIKO, YAMAGUCHI NATSUO, ISHITSUKA NORIO, KIMURA YASUHIRO, YOSHIDA SHOJI, ABIKO MINORU, TAKEUCHI TAKASHI, ISHIDA HIROSHI, MAEDA ATSUSHI
Format Patent
LanguageEnglish
Published 11.10.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A technique that makes it possible to suppress a crystal defect produced in an active area and thereby reduce the fraction defective of semiconductor devices is provided. A first embodiment relates to the planar configuration of SRAM. One of the features of the first embodiment is as illustrated in FIG. 4. That is, on the precondition that the active areas in n-channel MISFET formation regions are all configured in the isolated structure: the width of the terminal sections is made larger than the width of the central parts of the active areas. For example, the terminal sections are formed in an L shape.
Bibliography:Application Number: US20080262180