Method for fabricating semiconductor device

A method of fabricating a semiconductor device includes forming a via hole in a semiconductor substrate, forming an isolation layer on an inner side of the via hole, forming a diffusion barrier layer over an upper portion of the semiconductor substrate and the inner side of the via hole where the is...

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Bibliographic Details
Main Authors DO LEE-MI, BAEK KYU-HA, PARK JI MAN, PARK KUNSIK, KIM DONG-PYO
Format Patent
LanguageEnglish
Published 16.08.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating a semiconductor device includes forming a via hole in a semiconductor substrate, forming an isolation layer on an inner side of the via hole, forming a diffusion barrier layer over an upper portion of the semiconductor substrate and the inner side of the via hole where the isolation layer is formed, arranging a solvent, which contains electrically charged metal particles, on the semiconductor substrate where the diffusion barrier layer is formed, and filling the via hole with the metal particles by moving the metal particles using applied external force. The applied external force said includes a voltage causing an electric current to flow between the semiconductor substrate and the solvent, an electrical field applied between the semiconductor substrate and the solvent, or a magnetic field applied between the semiconductor substrate and the solvent.
Bibliography:Application Number: US20100689344