Method for manufacturing nonvolatile storage element and method for manufacturing nonvolatile storage device

A method for manufacturing a nonvolatile storage element that minimizes shape shift between an upper electrode and a lower electrode, and which includes: depositing, in sequence, a connecting electrode layer which is conductive, a lower electrode layer and a variable resistance layer which are made...

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Bibliographic Details
Main Authors TAKAGI TAKESHI, MIKAWA TAKUMI, ARITA KOJI, KAWASHIMA YOSHIO
Format Patent
LanguageEnglish
Published 19.07.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for manufacturing a nonvolatile storage element that minimizes shape shift between an upper electrode and a lower electrode, and which includes: depositing, in sequence, a connecting electrode layer which is conductive, a lower electrode layer and a variable resistance layer which are made of a non-noble metal nitride and are conductive, an upper electrode layer made of noble metal, and a mask layer; forming the mask layer into a predetermined shape; forming the upper electrode layer, the variable resistance layer, and the lower electrode layer into the predetermined shape by etching using the mask layer as a mask; and removing, simultaneously, the mask and a region of the connecting electrode layer that has been exposed by the etching.
Bibliography:Application Number: US20090669812