Method for testing a memory device

A method for testing a random-access memory (RAM) includes six tests. The first test is performed by performing a write and read test to storage locations of the RAM. The second test is performed by testing walking 1's across each data bus of the RAM. The third test is performed by testing walk...

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Bibliographic Details
Main Authors TANG CHIANGUNG, HONG XUE-WEN, TONG MO-YING
Format Patent
LanguageEnglish
Published 28.06.2011
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A method for testing a random-access memory (RAM) includes six tests. The first test is performed by performing a write and read test to storage locations of the RAM. The second test is performed by testing walking 1's across each data bus of the RAM. The third test is performed by testing walking 0's across the data bus of the RAM. The fourth test is performed by testing walking 1's across each address bus of the RAM. The fifth test is performed by testing walking 0's across the address bus bit of the RAM. The sixth test is performed by performing a write and read test to random blocks in the storage locations of the RAM.
Bibliography:Application Number: US20090504808