System and method for employing patterning process statistics for ground rules waivers and optimization

A system and method of employing patterning process statistics to evaluate layouts for intersect area analysis includes applying Optical Proximity Correction (OPC) to the layout, simulating images formed by the mask and applying patterning process variation distributions to influence and determine c...

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Bibliographic Details
Main Authors SINGH RAMA NAND, LAVIN MARK ALAN, NAYAK JAWAHAR PUNDALIK, HENG FOOK-LUEN, LEE JIN-FUW, LIN CHIEH-YU
Format Patent
LanguageEnglish
Published 14.06.2011
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CALCULATING
CINEMATOGRAPHY
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTROGRAPHY
GAMMA RAY OR X-RAY MICROSCOPES
HOLOGRAPHY
IRRADIATION DEVICES
MATERIALS THEREFOR
NUCLEAR ENGINEERING
NUCLEAR PHYSICS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
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Summary:A system and method of employing patterning process statistics to evaluate layouts for intersect area analysis includes applying Optical Proximity Correction (OPC) to the layout, simulating images formed by the mask and applying patterning process variation distributions to influence and determine corrective actions taken to improve and optimize the rules for compliance by the layout. The process variation distributions are mapped to an intersect area distribution by creating a histogram based upon a plurality of processes for an intersect area. The intersect area is analyzed using the histogram to provide ground rule waivers and optimization.
Bibliography:Application Number: US20080175097