Magneto-electric field effect transistor for spintronic applications

The present invention is directed to a magneto-electric field effect transistor comprising a channel region, a source connected to one side of the channel region and adapted to inject electrons into the channel region, a drain connected to the opposite side of the channel region and adapted to detec...

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Bibliographic Details
Main Authors LIEW YUN FOOK, TAN SENG GHEE, CHONG TOW CHONG, B A JALIL MANSOOR, TEO KIE LEONG
Format Patent
LanguageEnglish
Published 14.06.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INDUCTANCES
MAGNETS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
SEMICONDUCTOR DEVICES
TRANSFORMERS
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Summary:The present invention is directed to a magneto-electric field effect transistor comprising a channel region, a source connected to one side of the channel region and adapted to inject electrons into the channel region, a drain connected to the opposite side of the channel region and adapted to detect spin polarized electrons; and a gate comprising at least one magnetic double pair element comprising four magnetic elements each magnetic element being adapted to induce a magnetic field into the channel region, wherein the total induced magnetic field of the magnetic double pair element is controllable to be substantially zero, and wherein the gate is further adapted to induce an electrical field into the channel region.
Bibliography:Application Number: US20040587445