Dual wired integrated circuit chips

A semiconductor device having wiring levels on opposite sides and a method of fabricating a semiconductor structure having contacts to devices and wiring levels on opposite sides. The method including fabricating a device on a silicon-on-insulator substrate with first contacts to the devices and wir...

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Bibliographic Details
Main Authors GAMBINO JEFFREY PETER, STAMPER ANTHONY KENDALL, BERNSTEIN KERRY, JAFFE MARK DAVID, DALTON TIMOTHY JOSEPH, KARTSCHOKE PAUL DAVID
Format Patent
LanguageEnglish
Published 14.06.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device having wiring levels on opposite sides and a method of fabricating a semiconductor structure having contacts to devices and wiring levels on opposite sides. The method including fabricating a device on a silicon-on-insulator substrate with first contacts to the devices and wiring levels on a first side to the first contacts, removing a lower silicon layer to expose the buried oxide layer, forming second contacts to the devices through the buried oxide layer and forming wiring levels over the buried oxide layer to the second contacts.
Bibliography:Application Number: US20080029575