Method of forming a shallow trench isolation structure

An embodiment of the disclosure includes a method of forming a shallow trench isolation structure. A substrate is provided. The substrate includes a top surface. A trench is formed to extend from the top surface into the substrate. The trench has sidewalls and a bottom surface. A silicon liner layer...

Full description

Saved in:
Bibliographic Details
Main Authors WANG SHIANG-BAU, SYUE SEN-HONG, HSIEH BOR CHIUAN
Format Patent
LanguageEnglish
Published 24.05.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:An embodiment of the disclosure includes a method of forming a shallow trench isolation structure. A substrate is provided. The substrate includes a top surface. A trench is formed to extend from the top surface into the substrate. The trench has sidewalls and a bottom surface. A silicon liner layer is formed on the sidewalls and the bottom surface. A flowable dielectric material is filled in the trench. An anneal process is performed to densify the flowable dielectric material and convert the silicon liner layer into a silicon oxide layer simultaneously.
Bibliography:Application Number: US20100892331