Storage cell having a T-shaped gate electrode and method for manufacturing the same

A method for manufacturing an integrated circuit including at least one storage cell is provided. The method includes providing a substrate having a first and second side, and a plurality of parallel trenches so that a dividing wall is formed between adjacent trenches, filling the trenches with an i...

Full description

Saved in:
Bibliographic Details
Main Authors NAGEL NICOLAS, VOERCKEL ANDREAS, OLLIGS DOMINIK, SACHSE JENS-UWE, HEINRICHSDORFF FRANK, MUELLER TORSTEN
Format Patent
LanguageEnglish
Published 03.05.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method for manufacturing an integrated circuit including at least one storage cell is provided. The method includes providing a substrate having a first and second side, and a plurality of parallel trenches so that a dividing wall is formed between adjacent trenches, filling the trenches with an insulating compound, providing a first insulating layer having a first and second side on the top surface of the dividing wall, wherein the first side is arranged on the substrate's first side, providing a first conductive layer having a first and second side, wherein the first side is arranged on the insulating layer's second side, wherein the conductive layer protrudes from the substrate surface, providing a second conductive layer having a first and second side, wherein the first side is located on the first conductive layer's second side, and removing parts of the second conductive layer by an anisotropic etching means.
Bibliography:Application Number: US20080131794