Method of fabricating thin film transistor array substrate

A method of fabricating a TFT array substrate that prevents mobile ions from moving from a photoresist to channels of the TFT by the gate electrode of the TFT by performing photolithography processes for ion injection after forming gate electrode of TFT and, in addition, a method of fabricating a TF...

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Bibliographic Details
Main Author HWANG EUI-HOON
Format Patent
LanguageEnglish
Published 03.05.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating a TFT array substrate that prevents mobile ions from moving from a photoresist to channels of the TFT by the gate electrode of the TFT by performing photolithography processes for ion injection after forming gate electrode of TFT and, in addition, a method of fabricating a TFT array substrate that omits a photolithography process for forming a lower electrode of a storage capacitor by forming the lower electrode of the storage capacitor by a channel doping process for a PMOS TFT.
Bibliography:Application Number: US20070889175