Method and structure for ballast resistor

A method for fabricating a low-value resistor such as a ballast resistor for bipolar junction transistors. The resistor may be fabricated using layers of appropriate sheet resistance so as to achieve low resistance values in a compact layout. The method may rely on layers already provided by a conve...

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Bibliographic Details
Main Authors COOLBAUGH DOUGLAS D, WATSON KIMBALL M, RASSEL ROBERT M, HE ZHONG-XIANG, ESHUN EBENEZER E
Format Patent
LanguageEnglish
Published 05.04.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for fabricating a low-value resistor such as a ballast resistor for bipolar junction transistors. The resistor may be fabricated using layers of appropriate sheet resistance so as to achieve low resistance values in a compact layout. The method may rely on layers already provided by a conventional CMOS process flow, such as contact plugs and fully silicided (FUSI) metal gates.
Bibliography:Application Number: US20080062262