Method of manufacturing a dual metal Schottky diode

An embodiment of the invention is a Schottky diode 22 having a semiconductor substrate 3, a first metal 24, a barrier layer 26, and second metal 28. Another embodiment of the invention is a method of manufacturing a Schottky diode 22 that includes providing a semiconductor substrate 3, forming a bar...

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Bibliographic Details
Main Authors DUMIN JENNIFER S, JONES PATRICK J, KIM HONG-RYONG, PHAN TONY T, IRWIN RICHARD B, BAILEY FREDRIC D, CHUANG MING-YEH
Format Patent
LanguageEnglish
Published 08.03.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An embodiment of the invention is a Schottky diode 22 having a semiconductor substrate 3, a first metal 24, a barrier layer 26, and second metal 28. Another embodiment of the invention is a method of manufacturing a Schottky diode 22 that includes providing a semiconductor substrate 3, forming a barrier layer 26 over the semiconductor substrate 3, forming a first metal layer 23 over the semiconductor substrate 3, annealing the semiconductor substrate 3 to form areas 24 of reacted first metal and areas 23 of un-reacted first metal, and removing selected areas 23 of the un-reacted first metal. The method further includes forming a second metal layer 30 over the semiconductor substrate 3 and annealing the semiconductor substrate 3 to form areas 28 of reacted second metal and areas 30 of un-reacted second metal.
Bibliography:Application Number: US20050095245