Dielectric layer for semiconductor device and method of manufacturing the same
A semiconductor device comprises a silicate interface layer and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises metal alloy oxides.
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| Main Authors | , |
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| Format | Patent |
| Language | English |
| Published |
08.03.2011
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A semiconductor device comprises a silicate interface layer and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises metal alloy oxides. |
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| AbstractList | A semiconductor device comprises a silicate interface layer and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises metal alloy oxides. |
| Author | LEE JONG-HO LEE NAE-IN |
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| Notes | Application Number: US20080098373 |
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| PublicationDateYYYYMMDD | 2011-03-08 |
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| PublicationYear | 2011 |
| RelatedCompanies | SAMSUNG ELECTRONICS CO., LTD |
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| Snippet | A semiconductor device comprises a silicate interface layer and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Dielectric layer for semiconductor device and method of manufacturing the same |
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