Reduction of defects formed on the surface of a silicon oxynitride film

Methods for reducing defects on the surface of a silicon oxynitride film are disclosed. In one embodiment, the methods include forming a silicon oxynitride film on a semiconductor substrate and heating the silicon oxynitride film to increase a hydrophilicity of a surface of the silicon oxynitride fi...

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Bibliographic Details
Main Author YOKONAGA NORIYUKI
Format Patent
LanguageEnglish
Published 22.02.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods for reducing defects on the surface of a silicon oxynitride film are disclosed. In one embodiment, the methods include forming a silicon oxynitride film on a semiconductor substrate and heating the silicon oxynitride film to increase a hydrophilicity of a surface of the silicon oxynitride film prior to treating the surface of the silicon oxynitride film with a hydrofluoric acid.
Bibliography:Application Number: US20070004676