Method of fabricating non-volatile memory device

• Main Authors: SONG SEOK PYO, SHEEN DONG SUN
• Format: Patent
• Language: English
• Published: 15.02.2011
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of fabricating a non-volatile memory device, A tunnel insulating layer, a floating gate, and a pad nitride layer is formed on a semiconductor substrate. A isolation region of the semiconductor substrate is formed by etching to a predetermined depth, and a liner insulating layer is formed on an entire surface of the resulting trench for device isolation. A filling insulation layer is formed on the liner insulating layer to fill the trench and a first etching process is performed on the filling insulation layer and the liner insulating layer. The surface of semiconductor is recessed by performing a second etching process on the filling insulation layer. A capping layer is formed on an entire surface of the result formed by the second etching process. The device isolation layer of a concave shape is formed by performing an etching process on the capping layer.