Developing method and method for fabricating semiconductor device using the developing method

In a developing method, a developer is supplied onto a resist film provided on a substrate, made of a resist and having an upper surface on which design patterns having different mask opening ratios are exposed and a development reaction is caused to proceed on the resist film with the supplied deve...

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Bibliographic Details
Main Authors FUKUMOTO HIROFUMI, ASAHI KENICHI, KITAHARA HIDEKAZU, NODA KENJI, UJIMARU NAOHIKO
Format Patent
LanguageEnglish
Published 08.02.2011
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:In a developing method, a developer is supplied onto a resist film provided on a substrate, made of a resist and having an upper surface on which design patterns having different mask opening ratios are exposed and a development reaction is caused to proceed on the resist film with the supplied developer. After the development, the substrate is rotated so that the developer and the resist dissolved in the developer are removed. Then, a rinsing solution is supplied onto the resist film subjected to development and the substrate is rotated, thereby washing out the developer and the resist dissolved in the developer. The rotation speed of the substrate in removing the developer is a half or less of the rotation speed of the substrate in the rinsing step of washing out the resist.
Bibliography:Application Number: US20060646420