Edge termination for semiconductor device

A semiconductor device has active region (30) and edge termination region (32) which includes a plurality of floating field regions (46). Field plates (54) extend in the edge termination region (32) inwards from contact holes (56) towards the active region (30) over a plurality of floating field reg...

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Main Authors SWANENBERG MAARTEN J, VAN DALEN ROB
Format Patent
LanguageEnglish
Published 28.12.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract A semiconductor device has active region (30) and edge termination region (32) which includes a plurality of floating field regions (46). Field plates (54) extend in the edge termination region (32) inwards from contact holes (56) towards the active region (30) over a plurality of floating field regions (46). Pillars (40) may be provided.
AbstractList A semiconductor device has active region (30) and edge termination region (32) which includes a plurality of floating field regions (46). Field plates (54) extend in the edge termination region (32) inwards from contact holes (56) towards the active region (30) over a plurality of floating field regions (46). Pillars (40) may be provided.
Author VAN DALEN ROB
SWANENBERG MAARTEN J
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Snippet A semiconductor device has active region (30) and edge termination region (32) which includes a plurality of floating field regions (46). Field plates (54)...
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ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Edge termination for semiconductor device
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