Method for manufacturing semiconductor device

A semiconductor film is formed on a GaAs substrate (semiconductor substrate). An SiO2 film (insulating film) is formed on the semiconductor film, and the SiO2 film is patterned. The semiconductor film is etched using the SiO2 film as a mask to form a mesa structure. The surface of the SiO2 film is t...

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Bibliographic Details
Main Authors TAKIGUCHI TORU, WATATANI CHIKARA
Format Patent
LanguageEnglish
Published 21.12.2010
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor film is formed on a GaAs substrate (semiconductor substrate). An SiO2 film (insulating film) is formed on the semiconductor film, and the SiO2 film is patterned. The semiconductor film is etched using the SiO2 film as a mask to form a mesa structure. The surface of the SiO2 film is treated by ashing, using SF6 gas (fluorine-containing gas), to terminate the surface of the SiO2 film with fluorine. The mesa structure is selectively buried with a III-V compound semiconductor film, using the SiO2 film having the surface that has been terminated by fluorine, as a mask.
Bibliography:Application Number: US20080034195