Method of manufacturing semiconductor device

• Main Authors: TOBIMATSU HIROSHI, FUTASE TAKUYA
• Format: Patent
• Language: English
• Published: 14.12.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a technology capable of improving reliability and manufacturing yield of a semiconductor device by reducing variations of electrical characteristics in connection hole portions. After a semiconductor wafer is placed over a wafer stage provided in a chamber for dry cleaning treatment of a deposition system, dry cleaning treatment is performed to a principal surface of the semiconductor wafer by supplying reducing gas, sequentially, heat treatment is performed to the semiconductor wafer at a first temperature of 100 to 150° C. by a showerhead which is maintained at 180° C. Next, after the semiconductor wafer is vacuum transferred from the chamber to a chamber for heat treatment, heat treatment is performed to the semiconductor wafer at a second temperature of 150 to 400° C. in the chamber, thereby removing a product remaining over the principal surface of the semiconductor wafer.