Method of and apparatus for analyzing ions adsorbed on surface of mask

A method of analyzing ions adsorbed on a surface of a mask for pattern formation of a semiconductor device, and an apparatus using the same are disclosed. The ion analyzing method includes: filling a heating container within a main chamber with a predetermined amount of a solvent; immersing a mask i...

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Bibliographic Details
Main Authors HAN SUNG-JAE, CHA BYUNGOL, JEONG HAE-YOUNG, LEE DONG-HUN
Format Patent
LanguageEnglish
Published 30.11.2010
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Summary:A method of analyzing ions adsorbed on a surface of a mask for pattern formation of a semiconductor device, and an apparatus using the same are disclosed. The ion analyzing method includes: filling a heating container within a main chamber with a predetermined amount of a solvent; immersing a mask in the solvent-filled heating container; raising an internal pressure of the chamber to a predetermined level by supplying gas into the chamber; separating ions from a surface of the mask by heating the solvent within the heating container at a predetermined temperature for a predetermined period; and analyzing the ions by collecting the solvent.
Bibliography:Application Number: US20080197052