Probe device for a metrology instrument and method of fabricating the same

A method of producing a probe device for a metrology instrument such as an AFM includes providing a substrate having front and back surfaces and then forming an array of tip height structures on the first surface of the substrate, the structures having varying depths corresponding to selectable tip...

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Bibliographic Details
Main Authors FAN WENJUN, NAGLE STEVEN F
Format Patent
LanguageEnglish
Published 26.10.2010
Subjects
APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM]
MEASURING
PHYSICS
SCANNING-PROBE TECHNIQUES OR APPARATUS
TESTING
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Summary:A method of producing a probe device for a metrology instrument such as an AFM includes providing a substrate having front and back surfaces and then forming an array of tip height structures on the first surface of the substrate, the structures having varying depths corresponding to selectable tip heights. The back surface of the substrate is etched until a thickness of the substrate substantially corresponds to a selected tip height, preferably by monitoring this etch visually and/or monitoring the etch rate. The tips are patterned from the front side of the wafer relative to fixed ends of the cantilevers, and then etched using an anisotropic etch. As a result, probe devices having sharp tips and short cantilevers exhibit fundamental resonant frequencies greater than 700 kHz or more.
Bibliography:Application Number: US20070833104