Multi-step photomask etching with chlorine for uniformity control

Methods for etching quartz are provided herein. In one embodiment, a method of etching quartz includes providing a film stack on a substrate support disposed in a processing chamber, the film stack having a quartz layer partially exposed through a patterned layer; and etching the quartz layer of the...

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Bibliographic Details
Main Authors ANDERSON SCOTT A, KOCH RENEE
Format Patent
LanguageEnglish
Published 31.08.2010
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:Methods for etching quartz are provided herein. In one embodiment, a method of etching quartz includes providing a film stack on a substrate support disposed in a processing chamber, the film stack having a quartz layer partially exposed through a patterned layer; and etching the quartz layer of the film stack in a multi-step process including a first step of etching the quartz layer utilizing a first process gas comprising at least one fluorocarbon process gas and a chlorine-containing process gas; and a second step of etching the quartz layer utilizing a second process gas comprising at least one fluorocarbon process gas.
Bibliography:Application Number: US20060612036