Method of managing a memory device employing three-level cells

A method of managing a multi-level memory device having singularly addressable three-level cells includes storing strings of three bits by coding them in corresponding ternary strings according to a coding scheme and writing each of the ternary strings in a respective pair of three-level cells. Stri...

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Bibliographic Details
Main Authors POIDOMANI CARLA GIUSEPPINA, BETTINI LUIGI, CONFALONIERI EMANUELE, TURBANTI PAOLO
Format Patent
LanguageEnglish
Published 24.08.2010
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A method of managing a multi-level memory device having singularly addressable three-level cells includes storing strings of three bits by coding them in corresponding ternary strings according to a coding scheme and writing each of the ternary strings in a respective pair of three-level cells. Strings of three bits are read by reading respective ternary strings written in respective pairs of three-level cells and decoding each read ternary string in a corresponding string of three bits according to the coding scheme. A pair of adjacent bits, belonging to at least one of a same initial string and two initial adjacent strings, are programmed by identifying pairs of three-level cells to be programmed that encode the strings of three bits and programming each pair of three-level cells.
Bibliography:Application Number: US20080039268