Semiconductor package substrate having different thicknesses between wire bonding pad and ball pad and method for fabricating the same

Disclosed herein are a semiconductor package substrate and a method for fabricating the same. In the semiconductor package substrate, the circuit layer of the wire bonding pad side differs in thickness from that of the ball pad side to which a half etching process is applied. In addition, a connecti...

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Bibliographic Details
Main Authors SHIN YOUNG HWAN, KIM YOON SU, LEE TAE GON, YOON KYOUNG RO
Format Patent
LanguageEnglish
Published 03.08.2010
Subjects
BASIC ELECTRIC ELEMENTS
CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
PRINTED CIRCUITS
SEMICONDUCTOR DEVICES
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Summary:Disclosed herein are a semiconductor package substrate and a method for fabricating the same. In the semiconductor package substrate, the circuit layer of the wire bonding pad side differs in thickness from that of the ball pad side to which a half etching process is applied. In addition, a connection through hole is constructed to provide an electrical connection between the plating lead lines on the wire bonding pad side and the ball pad side, thereby preventing electrical disconnection when the plating lead line of the wire bonding pad side is cut.
Bibliography:Application Number: US20060495649