Integrated circuit device and method of manufacture

• Main Authors: WANG PENG-FEI, STRASSER MARC, LUYKEN HANNES, NUETZEL JOACHIM, WEIS ROLF, SCHLOESSER TILL
• Format: Patent
• Language: English
• Published: 27.07.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of manufacturing a transistor is disclosed. The method includes forming a first and a second source/drain regions, a channel connecting the first and the second source/drain regions and a gate electrode for controlling the conductivity of the channel. The gate electrode is formed by definin...