Integrated circuit device and method of manufacture

A method of manufacturing a transistor is disclosed. The method includes forming a first and a second source/drain regions, a channel connecting the first and the second source/drain regions and a gate electrode for controlling the conductivity of the channel. The gate electrode is formed by definin...

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Bibliographic Details
Main Authors WANG PENG-FEI, STRASSER MARC, LUYKEN HANNES, NUETZEL JOACHIM, WEIS ROLF, SCHLOESSER TILL
Format Patent
LanguageEnglish
Published 27.07.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a transistor is disclosed. The method includes forming a first and a second source/drain regions, a channel connecting the first and the second source/drain regions and a gate electrode for controlling the conductivity of the channel. The gate electrode is formed by defining a gate groove in the substrate, and defining a pocket in each of the isolation trenches at a position adjacent to the groove so that the two pockets will be connected with the groove and the groove is disposed between the two pockets. A gate insulating material is provided at an interface between the active area and the groove and at an interface between the active area and the pockets. A gate electrode material is deposited so as to fill the groove and the two pockets.
Bibliography:Application Number: US20050222540