Monitoring of temperature variation across wafers during processing
A method of measuring temperature across wafers during semiconductor processing includes the step of providing a correlation between a peak wafer temperature during a processing step and a change in wafer surface charge or surface potential following the processing step. A first wafer to be characte...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
29.06.2010
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Subjects | |
Online Access | Get full text |
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Summary: | A method of measuring temperature across wafers during semiconductor processing includes the step of providing a correlation between a peak wafer temperature during a processing step and a change in wafer surface charge or surface potential following the processing step. A first wafer to be characterized for its peak temperature spatial distribution during the processing step is processed through the processing step. The wafer surface charge or surface potential at a plurality of locations on the first wafer are measured following the processing step. A peak temperature spatial distribution for the first wafer is then determined based on the correlation and the wafer surface charge or surface potential measured in the measuring step. |
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Bibliography: | Application Number: US20080037531 |