Encapsulated damascene with improved overlayer adhesion

An integrated circuit device comprising a partially embedded and encapsulated damascene structure and method for forming the same to improve adhesion to an overlying dielectric layer, the integrated circuit device including a conductive material partially embedded in an opening formed in a dielectri...

Full description

Saved in:
Bibliographic Details
Main Authors WANG CHAO-HSIUNG, WU PING-KUN
Format Patent
LanguageEnglish
Published 15.06.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:An integrated circuit device comprising a partially embedded and encapsulated damascene structure and method for forming the same to improve adhesion to an overlying dielectric layer, the integrated circuit device including a conductive material partially embedded in an opening formed in a dielectric layer; wherein said conductive material is encapsulated with a first barrier layer comprising sidewall and bottom portions and a second barrier layer covering a top portion, said conductive material and first barrier layer sidewall portions extending to a predetermined height above an upper surface of the dielectric layer to form a partially embedded damascene.
Bibliography:Application Number: US20050241355