Methods of forming semiconductor device

A method of forming a semiconductor device, where the method may include forming a first trench in a semiconductor substrate, forming first device isolation patterns that fill the first trench, forming spacers on sidewalls of the first device isolation patterns, forming a second trench in the semico...

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Bibliographic Details
Main Authors CHANG SUNG-NAM, SEO SEUNG-GUN, CHANG DONG-WON, EUN DONG-SEOG
Format Patent
LanguageEnglish
Published 15.06.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of forming a semiconductor device, where the method may include forming a first trench in a semiconductor substrate, forming first device isolation patterns that fill the first trench, forming spacers on sidewalls of the first device isolation patterns, forming a second trench in the semiconductor substrate between first device isolation patterns, and forming second device isolation patterns that fill the second trench. The second trench is formed using an etching process adopting the first device isolation pattern and the spacer as a mask.
Bibliography:Application Number: US20080176618