Production of two superposed elements within an integrated electronic circuit

A first circuit element, which is reflective, is formed. A first layer, which is attenuating, is formed. above the first circuit element. A second layer, which is transparent, is formed above the first layer to fill an aperture in the first layer. An overlying lithography resist layer is then expose...

Full description

Saved in:
Bibliographic Details
Main Authors BUSTOS JESSY, CORONEL PHILIPPE, THONY PHILIPPE
Format Patent
LanguageEnglish
Published 15.06.2010
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A first circuit element, which is reflective, is formed. A first layer, which is attenuating, is formed. above the first circuit element. A second layer, which is transparent, is formed above the first layer to fill an aperture in the first layer. An overlying lithography resist layer is then exposed to a radiation flux level below a development threshold but high enough that a sum of the radiation flux level and a reflected secondary radiation flux level exceeds the development threshold. The lithography resist layer is developed so as to obtain a mask having an opening through which the first and second layers are removed to form a second aperture which is filled to form a second circuit element.
Bibliography:Application Number: US20060442703