Device structures for active devices fabricated using a semiconductor-on-insulator substrate and design structures for a radiofrequency integrated circuit
Device structure for active devices fabricated in a semiconductor-on-insulator (SOI) substrate and design structures for a radiofrequency integrated circuit. The device structure includes a first isolation region in the semiconductor layer that extends from a top surface of a semiconductor layer to...
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
04.05.2010
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Subjects | |
Online Access | Get full text |
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Summary: | Device structure for active devices fabricated in a semiconductor-on-insulator (SOI) substrate and design structures for a radiofrequency integrated circuit. The device structure includes a first isolation region in the semiconductor layer that extends from a top surface of a semiconductor layer to a first depth, a second isolation region in the semiconductor layer that extends from the top surface of the semiconductor layer to a second depth greater than the first depth, and a first doped region in the semiconductor layer. The first doped region is disposed vertically between the first isolation region and an insulating layer disposed between the semiconductor layer and a handle wafer of the SOI substrate. The device structure may be included in a design structure embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit. |
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Bibliography: | Application Number: US20080108924 |