Device structures for active devices fabricated using a semiconductor-on-insulator substrate and design structures for a radiofrequency integrated circuit

• Main Authors: ROBISON ROBERT R, CHATTY KIRAN V, GAUTHIER ROBERT J, TONTI WILLIAM R, ABADEER WAGDI W, RANKIN JED H
• Format: Patent
• Language: English
• Published: 04.05.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Device structure for active devices fabricated in a semiconductor-on-insulator (SOI) substrate and design structures for a radiofrequency integrated circuit. The device structure includes a first isolation region in the semiconductor layer that extends from a top surface of a semiconductor layer to a first depth, a second isolation region in the semiconductor layer that extends from the top surface of the semiconductor layer to a second depth greater than the first depth, and a first doped region in the semiconductor layer. The first doped region is disposed vertically between the first isolation region and an insulating layer disposed between the semiconductor layer and a handle wafer of the SOI substrate. The device structure may be included in a design structure embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit.