Semiconductor device including contact pattern and method for fabricating the same

A method of fabricating a semiconductor device includes forming a barrier film over a semiconductor substrate and over a gate disposed on the substrate; forming a metal layer over the barrier film; selectively etching the metal layer and the barrier film to form a contact pattern between the gates;...

Full description

Saved in:
Bibliographic Details
Main Author BAE JAE JUN
Format Patent
LanguageEnglish
Published 04.05.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method of fabricating a semiconductor device includes forming a barrier film over a semiconductor substrate and over a gate disposed on the substrate; forming a metal layer over the barrier film; selectively etching the metal layer and the barrier film to form a contact pattern between the gates; forming a spacer over a sidewall of the contact pattern; forming an interlayer insulating film over the contact pattern and the gate; and polishing the interlayer insulating film to expose the contact pattern.
Bibliography:Application Number: US20070967334