Method for forming an RuOx electrode and structure

A method for forming an RuOx electrode comprising depositing a TiW layer on an RuOx layer, forming a photo-resist mask on the TiW layer, in order to mask the TiW layer into a masked TiW layer, etching the masked TiW layer with a CF4 plasma, a TiW mask being formed on the RuOx layer, the CF4 plasma i...

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Bibliographic Details
Main Authors BERNSTEIN STEVEN D, TOURE ABRON S, COLLINS STEVEN R
Format Patent
LanguageEnglish
Published 04.05.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for forming an RuOx electrode comprising depositing a TiW layer on an RuOx layer, forming a photo-resist mask on the TiW layer, in order to mask the TiW layer into a masked TiW layer, etching the masked TiW layer with a CF4 plasma, a TiW mask being formed on the RuOx layer, the CF4 plasma is not etching the RuOx and vaporizing unmasked RuOx portion of the RuOx layer with an oxygen plasma, the masked RuOx layer being formed into an RuOx electrode.
Bibliography:Application Number: US20070806191