Method of manufacturing semiconductor device

A method for manufacturing a semiconductor device includes coating a solution containing a perhydrosilazane polymer on a substrate, heating the solution to form a film containing the perhydrosilazane polymer, and oxidizing the film in a water vapor atmosphere at a reduced pressure to convert the fil...

Full description

Saved in:
Bibliographic Details
Main Authors KIYOTOSHI MASAHIRO, KAWASAKI ATSUKO, HOSHI TAKESHI
Format Patent
LanguageEnglish
Published 23.03.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method for manufacturing a semiconductor device includes coating a solution containing a perhydrosilazane polymer on a substrate, heating the solution to form a film containing the perhydrosilazane polymer, and oxidizing the film in a water vapor atmosphere at a reduced pressure to convert the film into an insulating film containing silicon and oxygen.
Bibliography:Application Number: US20060387854