Highly directional light emitting diode using photonic bandgap waveguides

Edge-emitting light source and method for fabricating an edge-emitting light source. The edge-emitting light source includes a photonic crystal having at least one waveguide region. An edge-emitting semiconductor structure having a light emitting active layer is incorporated within the at least one...

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Bibliographic Details
Main Author CORZINE SCOTT W
Format Patent
LanguageEnglish
Published 16.03.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Edge-emitting light source and method for fabricating an edge-emitting light source. The edge-emitting light source includes a photonic crystal having at least one waveguide region. An edge-emitting semiconductor structure having a light emitting active layer is incorporated within the at least one waveguide region. Light emitted by the edge-emitting semiconductor structure and within the bandgap of the photonic crystal is confined within the waveguide region and guided out of the photonic crystal through the waveguide region.
Bibliography:Application Number: US20060343122