Methods of forming contact openings

The present invention is directed to methods of forming contact openings. In one illustrative embodiment, the method includes forming a feature above a semiconducting substrate, forming a layer stack comprised of a plurality of layers of material above the feature, the layer stack having an original...

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Bibliographic Details
Main Authors WU DAVID D, MICHAEL MARK W
Format Patent
LanguageEnglish
Published 02.03.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention is directed to methods of forming contact openings. In one illustrative embodiment, the method includes forming a feature above a semiconducting substrate, forming a layer stack comprised of a plurality of layers of material above the feature, the layer stack having an original height, reducing the original height of the layer stack to thereby define a reduced height layer stack above the feature, forming an opening in the reduced height layer stack for a conductive member that will be electrically coupled to the feature and forming the conductive member in the opening in the reduced height layer stack.
Bibliography:Application Number: US20060381219