Semiconductor device and manufacturing method thereof

• Main Authors: KOBAYASHI HIROTAKA, OYU KIYONORI, HAMADA KOJI, OKONOGI KENSUKE
• Format: Patent
• Language: English
• Published: 23.02.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

In manufacturing a semiconductor device, the first gettering layer is formed on the backside of a wafer, and the second gettering layers are then formed on the backside and side surfaces of a chip, allowing these gettering layers to serve as trapping sites against metallic contamination that generat...