Semiconductor device and manufacturing method thereof

In manufacturing a semiconductor device, the first gettering layer is formed on the backside of a wafer, and the second gettering layers are then formed on the backside and side surfaces of a chip, allowing these gettering layers to serve as trapping sites against metallic contamination that generat...

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Bibliographic Details
Main Authors KOBAYASHI HIROTAKA, OYU KIYONORI, HAMADA KOJI, OKONOGI KENSUKE
Format Patent
LanguageEnglish
Published 23.02.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In manufacturing a semiconductor device, the first gettering layer is formed on the backside of a wafer, and the second gettering layers are then formed on the backside and side surfaces of a chip, allowing these gettering layers to serve as trapping sites against metallic contamination that generated after backside grinding in assembly processes.
Bibliography:Application Number: US20070680814